标题: SL10N04S N沟道增强模MOSFET [打印本页]

作者: 森利威尔电子    时间: 2021-5-8 16:38
标题: SL10N04S N沟道增强模MOSFET


Description
The SL10N04S uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.
General Features
VDS = 40V ID =10 A
RDS(ON) < 17mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply


Typical Characteristics
  







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