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SL10N04S N沟道增强模MOSFET

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ID:899448 发表于 2021-5-8 16:38 | 显示全部楼层 |阅读模式
51hei截图20210425100828.png

Description
The SL10N04S uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.
General Features
VDS = 40V ID =10 A
RDS(ON) < 17mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
51hei截图20210508163733.png

Typical Characteristics
   51hei截图20210508164121.png


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